Keynote Speaker

Prof. Zheng Zhang

University of Science and Technology Beijing

E-mail: zhangzheng@ustb.edu.cn

Title: Two-Dimensional Semiconductor Materials and Devices for Advanced-Node Integrated Circuits

Profile:

Prof. Zheng Zhang

• Professor, School of Materials Science and Engineering, USTB

• Director, Innovation Center for Key Materials and Technologies of Future Chips

• Associate Dean, Institute of Advanced Interdisciplinary Science and Technology

• Head, Department of Materials Physics and Chemistry

• Recipient, National Science Fund for Distinguished Young Scholars

• Chief Scientist, National Key Research and Development Program of China

• Council Member of Chinese Society of Stereology, Young Scientists Committee of Chinese Materials Research Society, and Beijing Society of Chemistry.

Research Expertise: Applied fundamental research on two-dimensional semiconductor materials and van der Waals heterostructure devices. Published >150 papers in Nature Materials, Nature Electronics, and Advanced Materials; authored 1 English monograph and co-authored another; filed 30 patents (22 invention patents granted).

Awards: National Natural Science Award (Second Class, 5th contributor); Beijing Municipal Science and Technology Award (Natural Science Award, Second Class, 1st contributor); Henry Fok Young Scientist Award (Second Class)

Abstract: 

In the post-Moore era, developing novel materials and devices to transcend dimensional scaling limits and fabricating next-generation integrated circuits (ICs) targeting the 1 nm technology node have become a global priority. In the emerging race for non-silicon materials compatible with 1 nm advanced-node fabrication, two-dimensional transition metal dichalcogenides (TMDCs) have emerged as one of the most competitive candidates due to their atomic-scale structural stability and semiconductor properties comparable to bulk silicon. Major economies, including the U.S., EU, and South Korea, have launched national initiatives to accelerate non-silicon material research. Notably, in 2021, industry leaders such as Samsung, IMEC, Intel, and TSMC unveiled technology roadmaps for 2D TMDC-based 1 nm node chips, while the International Roadmap for Devices and Systems (IRDS) has incorporated 2D materials into its 2028 commercialization plan for 1.5 nm node technologies.Our research team focuses on advancing TMDCs for future advanced-node IC applications. Key achievements include:

1. Wafer-scale synthesis: Proposed a two-dimensional confined melting growth mechanism, enabling high-quality growth of 2-inch single-crystal monolayer MoS₂;

2. Device engineering: Demonstrated van der Waals heterostructure devices with near-ideal Schottky-Mott limit contact properties;

3. Circuit integration: Developed pseudo-CMOS logic circuits with picowatt-level power consumption;

4. Platform development: Established a 6-inch 2D semiconductor R&D platform and initiated an 8-inch process verification platform, validating the feasibility of 2D materials for IC manufacturing.

This work bridges the gap between fundamental 2D semiconductor research and industrial-scale IC fabrication, offering critical insights for post-silicon electronics.