Invited Speaker
Assoc. Prof. Xufang Zhang
North China University of Technology
E-mail: zhangxufang@ncut.edu.cn
Title: Interface and Near Interface Trap Analysis for Al2O3/Diamond MOS with High-Temperature Annealing
Profile:
Associate Professor at North China University of Technology, high-level overseas talent in Beijing. She Got PhD from University of Tsukuba, and later served as an assistant professor at Kanazawa University in Japan and cooperated with Prof. Tokuda. Main researches focus on wide bandgap semiconductors, including SiC and diamond MOSFETs. Host and participate in many national-level major scientific research projects, including the National Natural Science Foundation of China, the Ministry of Education in Japan. Published over 10 high-level papers in renowned academic journals such as Carbon, APL, and DRM. Invited to give presentations at the 14th TWHM, 3rd and 5th Kanazawa Diamond workshops, IFWS & SSLCHINA 2024, The 5th International Symposium on functional diamond and SCDE 2024. Appointed as the Youth Editorial Board Member of Functional Diamond.
Abstract:
We focused on inversion-type diamond MOSFETs with normally-off properties with realizing diamond n- and p-doping, OH-diamond termination, oxide/diamond interface and near interface trap characterization. We developed novel OH-terminated diamond surface and focus on the key point-diamond/Al2O3 interface, which is the key to the channel mobility of diamond MOSFETs. Specifically, we employed the high-low C-V method, simultaneous C-V method, and conductance method by considering the surface potential fluctuation to analyze the properties of interface traps. In terms of the wide bandgap semiconductors, the near interface traps near the band edge of the semiconductor are also harmful, which enable to capture carriers and degrade the channel mobility and device stability. Therefore, we focused on the frequency-dependence of capacitance and conductance in the accumulation condition and established an equivalent circuit model to estimate the possible distribution of near interface traps close to the valence band edge of diamond. The comprehensive analysis of interface and near interface traps in diamond MOS structures would be important to find out effective approaches to improve the interface quality and device performance.