Invited Speaker

Lect. Xiaolu Yuan

University of Science and Technology Beijing

E-mail: luzi0730@163.com

Title: Graphene-Diamond Heterostructures: Toward All-Carbon Devices with Enhanced Electrical Properties

Profile:

Dr. Xiaolu Yuan is currently a Lecturer at the School of Mechanical Engineering, University of Science and Technology Beijing (USTB). She received the B.S. degree in Inorganic Non-metallic Materials Engineering from Yanshan University in 2016. Later, she obtained her Ph.D. degree in Materials Science and Engineering from the Institute for Advanced Materials and Technology, USTB, Beijing, China, in 2023. Her research interests include the graphene/diamond composite materials; the carbon nanotube/diamond composite materials; and the fabrication of diamond-based MOSFET.

Abstract:

Graphene-diamond (G-D) heterostructures have been attracting considerable attention due to its unique features for all carbon sp3-sp2 electronic applications. Whereby the electrical properties of diamond surface can be purposely tailored and significantly altered through transformed graphene layers. In this work, G-D heterostructures were prepared by nickel (Ni)-catalyzed high-temperature rapid annealing, and were analyzed by Raman, Hall effect measurement and Transmission electron microscopy (TEM). The results indicated that the difference in surface conductivity of GOD composite structure is mainly related to the number of transformed graphene layers, which is mainly affected by annealing temperature, annealing time and the thickness of nickel film. Notably, linear ohmic contact characteristics are established between Pd/Ti/Au contacts and the in situ G-D heterostructure without requiring additional postannealing treatment. An unprecedentedly low specific contact resistivity of 1.4 × 10–7 Ω cm2 has been achieved. This study paves new pathways for advancements in graphene-based devices or all-carbon electronics.