Invited Speaker

Assoc. Prof. Yu Fu

Xidian University

E-mail: fuyu@xidian.edu.cn

Title: Research Progress on Silicon-terminated Diamond Field-effect Transistors

Profile:

Yu Fu received the Ph.D. degree from the University of Electronic Science and Technology of China (UESTC) in 2022, Chengdu, China, majoring in electromagnetic field and microwave technology. During 2019-2022, he conducted diamond research as a visiting research fellow at Kawarada-Lab, Waseda University, Tokyo, Japan. From 2023, he joined in Xidian University (XDU) as a Huashan associated professor, Xi'an, China. His current research interests include fabrication, modeling and characterization of diamond-related electronics. He has published more than 20 papers, such as IEEE EDL/TED/ IEDM/ISPSD, Carbon, Applied Physics Letters, and so on.

Abstract:

In recent years, silicon-terminated diamond field-effect transistors have become a new research hotspot in diamond electronic devices due to their good dielectric adhesion and compatibility with CMOS processes. This report reviews the research progress of silicon-terminated diamond devices and introduces some of the latest research advances of Xidian University in this type of devices. In response to the lack of depletion-mode materials and high voltage characteristics, as well as the complex process of silicon-terminated diamond devices, Xidian University has developed high-voltage enhancement-mode hydrogen/silicon compositely terminated diamond devices, high conductivity depletion-mode hydrogenated silicon terminated diamond materials and devices, and proposed a new low resistance boron-silicon co-doped diamond ohmic contact technology.