Invited Speaker
Assoc. Prof. Benjian Liu
Harbin Institute of Technology
E-mail: liubenjian@hit.edu.cn
Title: MPCVD Diamond Boron Doping and Semiconductor Applications
Profile:
He is associate Professor and engaged in research on the growth of semiconductor materials such as diamond, transistor devices, Nuclear batteries, etc. He graduated from Harbin Institute of Technology(HIT) with a master's degree in 2016 and was recommended to pursue a master's degree at the Aerospace College of HIT without taking the entrance examination. He obtained the qualification for joint master's and doctoral studies and obtained a doctoral degree from HIT in 2022. Appointed as a young editorial board member of the journals Materials Reports and Vacuum and Cryogenics. Undertake national key research and development programs, National Natural Science Foundation of China Youth Fund, Postdoctoral Fund General Project, Provincial Doctoral Fund, and Basic Research Institute Stable Support Project. Published over 20 academic papers in journals such as Carbon, including more than 10 first/corresponding authors and 4 cover articles. Write two book chapters. Applied for 21 invention patents, granted 11 patents, including 1 US patent. Received 1 National Second Prize for Technological Invention, 1 Provincial Invention Patent Award, 1 Gold Award (Special Jury Commendation) and 1 Silver Award at the Geneva Invention Exhibition, and 1 Gold Award at the Macau International Innovation Invention Exhibition. Guided students to win 1 third prize in the National Challenge Cup, 1 first prize in the Provincial Challenge Cup. TCL Young Scholar. National graduate thesis review expert at the Degree and Graduate Education Development Center of the Ministry of Education. Reviewers such as Applied Physics Letters, Applied Optics, Functional Diamond, etc.
Abstract:
Diamond is a wide bandgap semiconductor material with a bandgap width of up to 5.5 eV. It has high breakdown field strength, high thermal conductivity, electron mobility, hole mobility, and radiation resistance, as well as high and low temperature resistance, making it suitable for semiconductor devices in extreme environments. Diamond is usually non-conductive, but in order to achieve its semiconductor applications, we need to regulate its electrical properties. We have successfully controlled the p-type semiconductor properties of diamond MPCVD growth by introducing a solid-state boron source. By controlling the atmosphere, the doping concentration of boron impurities can be effectively regulated. Based on p-type diamond doping technology, we have developed multiple diamond devices, including nuclear cells, field-effect transistor devices, and Schottky diode devices, and verified their performance. We have obtained isotope battery devices with open circuit voltage up to 2V using heterojunction technology. A low subthreshold swing field-effect transistor device with a voltage below 60mV/dec was achieved using a negative capacitance oxide gate dielectric, and its NOT gate circuit was developed.