Invited Speaker

Prof. Ming Xiao

Xidian University

E-mail: xiaoming@xidian.edu.cn

Title: Research on Terminal Structures of Wide Bandgap Nitride Power Semiconductor Devices

Profile:

Ming Xiao is a Professor at Xidian University. His research focuses on (ultra) wide bandgap semiconductor materials, devices, and their applications, as well as novel advanced semiconductor materials, devices, and integration technologies. He received his Bachelor's and Ph.D. degrees from Xidian University in 2012 and 2018, respectively. From 2018 to 2023, he conducted postdoctoral research and later worked as a research scientist at the Center for Power Electronics Systems (CPES), Virginia Tech, USA. Since 2024, he has served as a professor at Xidian University. In 2023, he received the IEEE Electron Devices Society (EDS) George E. Smith Award. Over the past five years, he has published more than 60 papers, including six papers at the prestigious IEEE International Electron Devices Meeting (IEDM). As first or corresponding author, he has published 26 SCI-indexed papers in top international conferences and leading journals such as Nature Communications, IEDM, IEEE Transactions on Power Electronics, IEEE Electron Device Letters, and Applied Physics Letters, including three IEDM papers.

Abstract:

We focus on the terminal structure design and performance verification of nitride-based power semiconductor devices, represented by gallium nitride and extending to ultra-wide bandgap materials. Terminal structures play a pivotal role in determining breakdown voltage, electric field distribution, and overall device reliability. Targeting both lateral and vertical device architectures, we investigate high electron mobility transistors, vertical PN diodes, SBD, and junction field-effect transistors, and propose high-voltage, high-reliability terminal designs that effectively suppress electric field crowding, enhance breakdown capability, and improve avalanche robustness. Among these, the PN junction serves as a critical element in terminal engineering. Furthermore, we explore the potential of ultra-wide bandgap materials such as aluminum nitride, leveraging their extreme physical properties to enable terminal designs suitable for high-voltage and high-temperature applications. Our research aims to deliver scalable, high-voltage terminal structure solutions for next-generation power electronic devices with superior efficiency and reliability.